issue 1 - july 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXTP25020DFH 20v, sot23, pnp medium power transistor summary bv ceo > -20v bv eco > -4v i c(cont) = 4a v ce(sat) < 60 mv @ 1a r ce(sat) = 39 m p d = 1.25w complementary part number zxtn25020dfh description advanced process capability and package design have been used to maximize the power handling and pe rformance of this small outline transistor. the compact size and ratings of this device make it ideally suited to applications where space is at a premium. features ? high power dissipation sot23 package high peak current high gain low saturation voltage applications mosfet gate drivers power switches motor control ordering information device marking 1a3 device reel size (inches) tape width (mm) quantity per reel ZXTP25020DFHta 7 8 3000 c e b c e b pinout - top view
ZXTP25020DFH issue 1 - july 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 0.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on 25mm x 25mm x 0.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (c) for a device surface mounted on 50mm x 50mm x 0.6mm fr 4 pcb with high coverage of single sided 2oz copper, in still air conditions. (d) as (c) above measured at t<5 seconds. parameter symbol limit unit collector-base voltage v cbo -25 v collector-emitter voltage (forward blocking) v ceo -20 v emitter-collector voltage (reverse blocking) v eco -4 v emitter-base voltage v ebo -7 v continuous collector current (c) i c -4 a base current i b -1 a peak pulse current i cm -10 a power dissipation at t amb =25c (a) p d 0.73 w linear derating factor 5.84 mw/c power dissipation at t amb =25c (b) p d 1.05 w linear derating factor 8.4 mw/c power dissipation at t amb =25c (c) p d 1.25 w linear derating factor 9.6 mw/c power dissipation at t amb =25c (d) p d 1.81 w linear derating factor 14.5 mw/c operating and storage temperature range t j , t stg -55 to 150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 171 c/w junction to ambient (b) r ja 119 c/w junction to ambient (c) r ja 100 c/w junction to ambient (d) r ja 69 c/w
ZXTP25020DFH issue 1 - july 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
ZXTP25020DFH issue 1 - july 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo -25 -55 v i c = -100 a collector-emitter breakdown voltage (base open) bv ceo -20 -45 v i c = -10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-base breakdown voltage bv ebo -7 -8.3 v i e = -100 a emitter-collector breakdown voltage (reverse blocking) bv eco -4 -8.5 v i c = -100 a (*) collector cut-off current i cbo <-1 -50 na v cb = -20v -20 a v cb = -20v, t amb = 100c emitter cut-off current i ebo <-1 -50 na v eb = -5.6v collector-emitter saturation voltage v ce(sat) -50 -60 mv i c = -1a, i b = -100ma (*) -150 -210 mv i c = -1a, i b = -10ma (*) -180 -240 mv i c = -2a, i b = -40ma (*) -155 -180 mv i c = -4a, i b = -400ma (*) base-emitter saturation voltage v be(sat) -960 -1050 mv i c = -4a, i b = -400ma (*) base-emitter turn-on voltage v be(on) -815 -900 mv i c = -4a, v ce = -2v (*) static forward current transfer ratio h fe 300 450 900 i c = -10ma, v ce = -2v (*) 200 310 i c = -1a, v ce = -2v (*) 70 100 i c = -4a, v ce = -2v (*) 20 i c = -10a, v ce = -2v (*) transition frequency f t 290 mhz i c = -50ma, v ce = -10v f = 50mhz output capacitance c obo 21 30 pf v cb = -10v, f = 1mhz (*) delay time t (d) 14.2 v cc = -10v. i c = -1a, i b1 = i b2 = -50ma. rise time t (r) 16.3 storage time t (s) 186 fall time t (f) 32.7
ZXTP25020DFH issue 1 - july 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXTP25020DFH issue 1 - july 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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